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| SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 JANUARY 1996 FEATURES * 60 Volt VDS * RDS(on)=14 PARTMARKING DETAIL ML COMPLEMENTARY TYPE ZVN3306F ZVP3306F D S G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -60 -90 -1.6 20 SOT23 UNIT V mA A V mW C 330 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss 60 50 25 8 8 8 8 8 -400 14 -60 -1.5 -3.5 20 -0.5 -50 V V nA A A Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS= 20V, VDS=0V VDS=-60 V, VGS=0V VDS=-48 V, VGS=0V, T=125C(2) VDS=-18 V, VGS=-10V VGS=-10V, ID=-200mA VDS=-18V, ID=-200mA mA mS pF pF pF ns ns ns ns VDS=-18V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss td(on) tr td(off) tf VDD -18V, ID=-200mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 -434 ZVP3306F TYPICAL CHARACTERISTICS -10 -1.0 I - Drain Current (Amps) -8 ID= -400mA -0.8 VGS= -16V -14V -12V -6 -0.6 -10V -9V -8V -7V -6V -5V -4.5V 0 -2 -4 -6 -8 -10 Drain Source -4 -0.4 -2 -200mA -100mA 0 -2 -4 -6 -8 -10 -0.2 0 V 0 VGS-Gate Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Voltage Saturation Characteristics Saturation Characteristics -Gate Source Voltage (Volts) 60 2 1 0 -2 -4 -6 -8 -10 -12 -14 -16 0 0.5 1.0 1.5 50 Note:VGS=0V f=1MHz Ciss Coss Crss Note:ID=- 0.2A C-Capacitance (pF) 40 30 VDS= -20V-40V -60V 20 10 0 -10 -20 -30 -40 -50 -60 -70 VDS-Drain Source Voltage (Volts) V/ 0 5 Q-Gate Charge (nC) Capacitance v drain-source voltage RDS(on)-Drain Source On Resistance Gate charge v gate-source voltage 100 2.6 VGS=-5V -6V and V -7V -10V -15V -20V VGS=-10V ID=0.37A 2.0 10 Normalised R 1.0 VGS=VDS ID=-1mA 1 -10 -100 -1000 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 ID-Drain Current (mA) Junction Temperature (C) On-resistance vs Drain Current Normalised RDS(on) and VGS(th) vs Temperature 3 - 435 |
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